MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202621108844 A) filed by Indian Institute Of Technology Bombay on September 10, 2026, for “bipolar Membrane With Flash Graphene Interfacial Layer And Fabrication Method”.
Inventors include Keshab Sapkota; Pawan Kumar; and Swatantra Pratap Singh.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: ABSTRACT “Bipolar Membrane with Flash Graphene Interfacial Layer and Fabrication Method” The present invention relates to a bipolar membrane (100) and a fabrication method based on sequential evaporation-induced phase separation and spray coating. The bipolar membrane (100) includes an anion-exchange layer (101) comprising quaternized poly(2,6-dimethyl-1,4-phenylene oxide) (QPPO), a cation-exchange layer (102) comprising sulfonated poly(ether ether ketone) (SPEEK), and an interfacial layer (103) positioned between and in direct contact with the layers. The interfacial layer (103) comprises Flash Graphene as a non-catalytic additive dispersed in SPEEK and defines a bipolar junction. During fabrication, an interfacial suspension is spray-coated onto a partially dried, tacky and mechanically stable surface of the anion-exchange layer (101), dried to form a distinct, uniform, continuous, and interconnected interfacial layer (103), and subsequently covered by the cation-exchange layer (102) to form the integrated bipolar membrane (100). FIG. 1
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