MUMBAI, India, May 1 -- Intellectual Property India has published a patent application (202641049613 A) filed by BTP Madhav; and Koneru Lakshmaiah Education Foundation, Vaddeswaram, Andhra Pradesh, on April 18, for 'a comparative electro-thermal study of mosfet's using si, 6h-sic, gan, gaas with inverter application.'
Inventor(s) include K. Pooja; Y. Sai Charan Reddy; V. Rohith; M. Lakshman; S. Hema Sree; G. R. K Prasad; and B T P Madhav.
The application for the patent was published on May 1, under issue no. 18/2026.
According to the abstract released by the Intellectual Property India: "The growing demand for high-performance power electronics highlights the limitations of conventional Silicon (Si) MOSFETs, particularly in terms of thermal conductivity and high-temperature operation. Wide bandgap materials such as 6H-Silicon Carbide (SiC), Gallium Nitride (GaN), and Gallium Arsenide (GaAs) offer superior electrical and thermal properties. However, a comprehensive comparative electro-thermal analysis is essential to evaluate their suitability for advanced applications. This project aims to model and simulate MOSFETs based on Si, 6H-SiC, GaN, and GaAs using COMSOL Multiphysics to analyze their electrical and thermal performance. The study focuses on extracting key characteristics such as Id-Vg and Id-Vd curves, evaluating power dissipation, and performing coupled electro-thermal simulations to capture self-heating effects. Critical parameters such as threshold voltage variation, saturation current, and hotspot temperature are compared across different materials. The methodology involves developing 2D device models in COMSOL, incorporating material-specific parameters including bandgap energy, carrier mobility, and thermal conductivity. Electrical and heat transfer physics are coupled to accurately simulate device behavior under varying biasing and ambient temperature conditions. In addition to device-level analysis, the project extends to an application-level study by integrating the modeled MOSFETs into a power inverter circuit. The inverter simulation evaluates switching performance, efficiency, and thermal stability of each material under realistic operating conditions. This provides a system-level perspective on how material choice impacts overall power conversion performance. The expected outcomes include comparative I-V characteristics, thermal distribution maps, and inverter performance metrics. The results are anticipated to demonstrate the superior thermal stability, higher efficiency, and enhanced current handling capabilities of SiC and GaN devices compared to conventional Si and GaAs. This study offers valuable insights for material selection in high-power, high-frequency, and high-temperature electronic applications such as electric vehicles, renewable energy systems, and industrial power converters."
Disclaimer: Curated by HT Syndication.
