Intellectual Property India Publishes Patent Application for 'A Nasicon-Type Anode Active Material And Processes Thereof' Filed by Jawaharlal Nehru Centre For Advanced Scientific Research

MUMBAI, India, Sept. 5 -- Intellectual Property India has published a patent application (202441015484 A) filed by Jawaharlal Nehru Centre For Advanced Scientific Research, Bangalore, Karnataka, on March 1, 2024, for 'a nasicon-type anode active material and processes thereof.'

Inventor(s) include Senguttuvan, Premkumar; and Patra, Biplab.

The application for the patent was published on Sept. 5, under issue no. 36/2025.

According to the abstract released by the Intellectual Property India: "The present disclosure provides an anode active material having a Formula I: NaxNbaMbM'c(PO4)3, wherein 'x' is in a range of 1 to 1.5; 'a' is in a range of 0.75 to 1.75; 'b' is in a range of 0.25 to 0.50; 'c' is in a range of 0 to 0.75; a + b + c = 2; and M and M' are independently at least one metal selected from aluminium, magnesium or transition metals. The present disclosure further provides a process of preparation of the anode active material, an anode, and an electrochemical cell comprising the anode."

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