MUMBAI, India, March 13 -- Intellectual Property India has published a patent application (202611007462 A) filed by Sanjay; and Parul Rajput, Bhiwani, Haryana, on Jan. 26, for 'a quintuple metal gate based si mosfet.'
Inventor(s) include Sanjay; Vibhor Kumar; and Anil Vohra.
The application for the patent was published on March 13, under issue no. 11/2026.
According to the abstract released by the Intellectual Property India: "The inventors report novel junctionless (JL) Quintuple Metal (QM) gate based Cylindrical gate all around (CGAA) and Double Surrounding Gate (DSG) Si MOSFET. To validate the device functioning, the behavior of drain current (ID) has been studied. Comparison has been made between inversion mode (IM) and JL devices of similar parameters. For a reasonable comparison between JL and IM Si MOSFET, for both CGAA and DSG, doping concentration is optimized (i) to get the same ION as IM Si MOSFET and (ii) to get the same threshold voltage (VTH) as IM Si MOSFET. It was found that there is about 820 times and 33 times smaller IOFF for matching ION and VTH devices respectively as compared to IM device for CGAA MOSFET. It was found that there is about 182 times and 33.5 times smaller IOFF for matching ION and VTH devices respectively as compared to IM device for DSG MOSFET."
Disclaimer: Curated by HT Syndication.
