MUMBAI, India, Nov. 7 -- Intellectual Property India has published a patent application (202441035341 A) filed by Samsung Electronics Co. Ltd., Gyeonggi, Republic of Korea, on May 3, 2024, for 'an integrated circuit for power supply glitch immune intermediate voltage supply and a method thereof.'
Inventor(s) include Rayabarapu, Parthavy; Siddamurthy, Subba Reddy; Tadinada, Aswani Aditya Kumar; and Issa, Venkatasuryam Setty.
The application for the patent was published on Nov. 7, under issue no. 45/2025.
According to the abstract released by the Intellectual Property India: "The present disclosure relates to an integrated circuit for generating an intermediate supply voltage which is immune to glitches on power supply voltage. An example integrated circuit comprises a Band Gap Reference (BGR) circuit configured to generate a reference voltage immune to glitches on a power supply. The integrated circuit also comprises a Low Dropout (LDO) circuit which gets the reference voltage from the BGR circuit. The LDO circuit is configured to generate a glitch immune intermediate supply voltage based on the reference voltage and the power supply which is prone to glitch."
Disclaimer: Curated by HT Syndication.
