Intellectual Property India Publishes Patent Application for 'Fin-Based Field Effect Transistor (FET) Source/Drain Strain to Enhance Driver Current and Performance' Filed by Qualcomm Incorporated

MUMBAI, India, Nov. 14 -- Intellectual Property India has published a patent application (202547098529 A) filed by Qualcomm Incorporated, San Diego, on Oct. 13, for 'fin-based field effect transistor (fet) source/drain strain to enhance driver current and performance.'

Inventor(s) include Li, Xia; Lim, Kwanyong; Yang, Haining; Panda, Biswa Ranjan; and Manchana, Ramesh.

The application for the patent was published on Nov. 14, under issue no. 46/2025.

According to the abstract released by the Intellectual Property India: "A field effect transistor (FET) device is described. The FET device includes a substrate, having a first vertical structure on the substrate, including a source/drain region, for example an NMOS source/drain region, having a first stressor material. The FET device also includes a second vertical structure on the substrate and including a drain/ source region, for example a PMOS drain/source region, having a second stressor material different from the first stressor material. The FET device further includes a metal gate on the first vertical structure and on the second vertical structure."

The patent application was internationally filed on Apr. 30, 2024, under International application No.PCT/US2024/027096.

Disclaimer: Curated by HT Syndication.