MUMBAI, India, Sept. 5 -- Intellectual Property India has published a patent application (202247054610 A) filed by Boe Technology Group Co. Ltd.; and Fuzhou Boe Optoelectronics Technology Co. Ltd., Beijing, on Sept. 23, 2022, for 'metal oxide thin-film transistor and manufacturing method therefor, display panel and display apparatus.'
Inventor(s) include Lin, Bin; Li, Liangliang; Liu, Zheng; Hu, Bo; Zhang, Rui; and Peng, Xinlin.
The application for the patent was published on Sept. 5, under issue no. 36/2025.
According to the abstract released by the Intellectual Property India: "The present disclosure relates to a metal oxide thin-film transistor and a manufacturing method therefor, a display panel and a display apparatus, which belong to the technical field of displays. The metal oxide thin-film transistor comprises a gate electrode, a gate insulating layer, a metal oxide semiconductor layer, a source electrode and a drain electrode, and a passivation layer, which are sequentially arranged on a base substrate, wherein the source electrode and the drain electrode each have a stacked structure, the stacked structure of the source electrode or the drain electrode at least comprises a main body metal layer and an electrode protection layer, and the electrode protection layer contains metal or metal alloy; the electrode protection layer is at least arranged between the metal oxide semiconductor layer and the main body metal layer; a metal oxide layer is provided between the electrode protection layer and the main body metal layer, and a metal element of the metal oxide layer comprises at least one of a metal element of the main body metal layer and a metal element of the electrode protection layer; the thickness of the metal oxide layer does not exceed 2% of the thickness of either one of the source electrode and the drain electrode; and the thickness of the metal oxide layer does not exceed 10% of the thickness of the electrode protection layer."
The patent application was internationally filed on Aug. 31, 2021, under International application No.PCT/CN2021/115779.
Disclaimer: Curated by HT Syndication.
