MUMBAI, India, July 11 -- Intellectual Property India has published a patent application (202441051292 A) filed by Indian Institute Of Technology, Chennai, Tamil Nadu, on July 4, 2024, for 'metasurfaces for 2d photodetectors and wavelength agnostic methods for design thereof.'
Inventor(s) include Krishnan, Sivarama; Bhallamudi, Vidya Praveen; Krishnamurthy, Srinivasan; Jamdar, Ayush Mukund; and Rituraj.
The application for the patent was published on July 11, under issue no. 28/2025.
According to the abstract released by the Intellectual Property India: "The invention discloses devices and methods for metasurfaces that exhibit near-complete absorption at certain wavelengths using a three-layer device structure. The first layer is a 2D material(101), the second is a photonic crystal substrate (PCS)(103) layer 5 with an array of holes, and the bottom is a reflective layer(105). The 2D material layer is black phosphorus, the PCS layer is polycrystalline silicon and the reflective layer is a Bragg grating of alternating layers of SiO2(107) and Sb2S3(109). The method optimizes the hole geometry of the PCS to allow it to absorb at target wavelengths by using the hole radius, 10 periodicity and thickness of the PCS. The method(200) involves inverse design that features Covariance Matrix Adaptation Evolution Strategy (CMA-ES) and Rigorous Coupled Wave Analysis (RCWA) to arrive at the optimized design. The method produces device designs with single or double resonances needed in optical communication, pumpprobe spectroscopy, second-harmonic generation and biphoton generation."
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