MUMBAI, India, Nov. 14 -- Intellectual Property India has published a patent application (202441036410 A) filed by Thirumoorthy M; Sadasivam K; Ashokan S; Vanitha K; and Selvakumar K, Sathyamangalam, Tamil Nadu, on May 8, 2024, for 'method and system for depositing agins2 films via pulse plating: controlling structural, electrical.'

Inventor(s) include Thirumoorthy M; Sadasivam K; Ashokan S; Vanitha K; and Selvakumar K.

The application for the patent was published on Nov. 14, under issue no. 46/2025.

According to the abstract released by the Intellectual Property India: "AgInSz films are deposited on conducting glass substrates coated in fin oxide at various duty cycles between 6 and 50% with a - 1.14 V (SCE) deposition potential. With increasing duty cycle, the thickness of the films, as measured by the Mitutoyo surface profilometcr, varied between 400 and 900 nm. AglnSz films made at various duty cycles have polycrystalline nature X-ray diffraction diagrams showing peaks equal to single-phase AglnSz' XPS tests were conducted on the films deposited at a 50% duty cycle. The binding energies of Ag 3d5/2 and Ag 3d3/2 may be assigned to the peaks at 36734 eV and 373.42 cV in the Ag 3d spectrum, respectively. The binding energies of Jn 3d5/2 and In 3dm are responsible for the two significant peaks in the In 3d spectra at 44434 eV and 451.85 eV, respectively. The S 2p Transitions binding energy can be given to the peaks al l6|.45 CV atomic force image of AgInSz films with different duty cycles. Surface roughness and Grain size decrease as The duty cycle increases. With the duty cycle, the film's resistance and mobility increased. As the duty cycle increased, carrier density decreased. There was photo conductivity in the films. Studies on photoelectrochemical cells showed greater efficiency when compared. The flat band po(ential obtained from Mott-Schottky plots is 0.93V (SCE). The films have conductivity of thc p-typc. Jpn, a measure of photocurrent variation with wavelength, peaked at L9] eV, the band gap value. Ambient temperature Peaks at 85, l29, and I60 cm'1 are ' visible in the fi|ms' Raman spectra, which correspond to the chalcopyritc structure. At ambient temperature, a single broad peak was seen at the 820 nm photo luminescence spectrum."

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