MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202517061579 A) filed by Aixtron Se, Herzogenrath, Germany, on June 27, for 'method for depositing gallium nitride gan on silicon si.'
Inventor(s) include Mauder, Christof; Fahle, Dirk; Booker, Ian Don; and Hahn, Utz Herwig.
The application for the patent was published on July 25, under issue no. 30/2025.
According to the abstract released by the Intellectual Property India: "The invention relates to a method for depositing a layer consisting of elements of main groups III and V on a SiC surface of a substrate made of silicon in a process chamber (2) of a CVD reactor, in which method the SiC surface is generated by means of a first chemical reaction of a first gaseous starting material containing carbon with the surface of the Si substrate at a first increased temperature of the substrate (6), and the layer is generated by means of a second chemical reaction of a second gaseous starting material containing the element of main group III with a third gaseous starting material containing the element of main group V at a second increased temperature."
The patent application was internationally filed on Dec. 18, 2023, under International application No.PCT/EP2023/086383.
Disclaimer: Curated by HT Syndication.
