MUMBAI, India, June 6 -- Intellectual Property India has published a patent application (202414090971 A) filed by Ningde Amperex Technology Limited, Ningde, China, on Nov. 22, 2024, for 'negative electrode plate, electrochemical apparatus, and electronic apparatus.'
Inventor(s) include Baoxiao Cheng.
The application for the patent was published on June 6, under issue no. 23/2025.
According to the abstract released by the Intellectual Property India: "A negative electrode active material layer includes a first negative electrode active material layer and a second negative electrode active material layer. The second negative electrode active material layer is located between the current collector and the first negative electrode active material layer. The first negative electrode active material layer includes a first graphite material, and Dv50 of the first graphite material is denoted as Dv150, satisfying 10 m = Dv150 = 16 m. The second negative electrode active material layer includes a second graphite material and a silicon-based material, Dv50 of the second graphite material is denoted as Dv250, satisfying 12 m = Dv250 = 30 m, and Dv50 of the silicon-based material is denoted as Dv350, satisfying 6 m = Dv350 = 10 m."
Disclaimer: Curated by HT Syndication.
