MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202547067745 A) filed by Hitachi Energy Ltd., Zurich, on July 16, for 'power semiconductor device and method for producing a power semiconductor device.'
Inventor(s) include Vemulapati, Umamaheswara; Vobecky, Jan; Wikstroem, Tobias; and Stiasny, Thomas.
The application for the patent was published on July 25, under issue no. 30/2025.
According to the abstract released by the Intellectual Property India: "A power semiconductor device (1) is specified, comprising - a first electrode (2), - a first semiconductor layer (3) of a first conductivity type, - a drift layer (4) of the first conductivity type, - a second semiconductor layer (5) of a second conductivity type different from the first conductivity type, and - a second electrode (6), wherein - at least one of the first semiconductor layer (3) and the second semiconductor layer (5) comprises an oxide layer (24) extending in an active region (9) of the power semiconductor device (1) being surrounded by a termination region (8) of the power semiconductor device (1), and - at least one of the first semiconductor layer (3) and the second semiconductor layer (5) has a bevel structure (19). Furthermore, a method for producing a power semiconductor device (1) is specified."
The patent application was internationally filed on Mar. 26, 2024, under International application No.PCT/EP2024/058108.
Disclaimer: Curated by HT Syndication.
