MUMBAI, India, March 13 -- Intellectual Property India has published a patent application (202611010001 A) filed by Chaudhary Charan Singh University, Meerut, Uttar Pradesh, on Jan. 30, for 'pulsed laser deposition method for preparing photosensitive mose2-ws2 composite thin film and product thereof.'
Inventor(s) include Ashwani Kumar; Beer Pal Singh; Vaishali; Devendra Kumar; Amit Kumar Singh; Manohar Singh; Yogendra Kumar Gautam; Kavita Sharma; and Raj Kishor Sharma.
The application for the patent was published on March 13, under issue no. 11/2026.
According to the abstract released by the Intellectual Property India: "The invention provides for a pulsed laser deposition method for preparing photosensitive molybdenum diselenide-tungsten disulfide composite thin film and the composite thin film thereof. The invention further provides for a highly efficient and reproducible method of preparing molybdenum diselenide-tungsten disulfide thin film based on pulsed laser deposition technique. Furthermore, the present invention provides for a molybdenum diselenide-tungsten disulfide thin film with high crystallinity, homogeneity, stoichiometric uniformity, excellent photosensitivity with fast response time and high stability. The invention thus provides for a novel, cost-effective, and reproducible method for industrial-scale fabrication of high-performance photodetector materials based on transition metal dichalcogenides."
Disclaimer: Curated by HT Syndication.
