MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202517064603 A) filed by International Business Machines Corporation, Armonk, U.S.A., on July 7, for 'reactive serial resistance reduction for magnetoresistive random-access memory devices.'
Inventor(s) include Gottwald, Matthias Georg; Hu, Guohan; Brown, Stephen; and Reznicek, Alexander.
The application for the patent was published on July 25, under issue no. 30/2025.
According to the abstract released by the Intellectual Property India: "A magnetoresistive device (102) is disclosed that includes a crystalline bottom electrode layer (126) on a semiconductor substrate (104), a crystalline metal layer (124) above the crystalline bottom electrode layer, a conductive oxide layer (122) above the crystalline metal layer, and a magnetic tunnel junction (MTJ) structure (108, 116, 120) above the conductive oxide layer. The conductive oxide layer (122) has a relatively low resistance and can be formed by an annealing process which causes a reaction of an insulating oxide layer (114) deposited on an amorphous reactive material layer (112)."
The patent application was internationally filed on Nov. 20, 2023, under International application No.PCT/IB2023/061672.
Disclaimer: Curated by HT Syndication.
