MUMBAI, India, July 25 -- Intellectual Property India has published a patent application (202547068290 A) filed by Qualcomm Incorporated, San Diego, on July 17, for 'row cell circuits with abrupt diffusion region width transitions.'
Inventor(s) include Yang, Haining; Bao, Junjing; Park, Hyunwoo; and Lim, Kwanyong.
The application for the patent was published on July 25, under issue no. 30/2025.
According to the abstract released by the Intellectual Property India: "Logic circuits are implemented in row cell circuits that include diffusion regions. Each diffusion region portion is employed by a transistor in a cell circuit. A current capacity of each transistor depends on a width of the diffusion region portion. A first diffusion region portion and a second diffusion region portion having different widths intersect along an axis (Y2), where the diffusion region of a row cell circuit abruptly transitions (e.g., at a square corner) in width. A gate (306(2)) disposed over the diffusion region along the intersection includes a first side (G1S1) on the first diffusion region portion and a second side (G1S2) on the second diffusion region portion. The transition occurring between the first side and the second side of the gate may be achieved by square corner features formed in the diffusion region. Such features were not previously achievable at small technology nodes due to mask pattern limitations."
The patent application was internationally filed on Mar. 11, 2024, under International application No.PCT/US2024/019404.
Disclaimer: Curated by HT Syndication.
