MUMBAI, India, Sept. 26 -- Intellectual Property India has published a patent application (202517082444 A) filed by International Business Machines Corporation, Armonk, U.S.A., on Aug. 29, for 'rram with metal-ferroelectric-insulator-metal stack.'
Inventor(s) include Ando, Takashi; Vega, Reinaldo; Lanzillo, Nicholas, Anthony; and Wolpert, David.
The application for the patent was published on Sept. 26, under issue no. 39/2025.
According to the abstract released by the Intellectual Property India: "The disclosed resistance switching memory structure (25) includes a dielectric stack of a ferroelectric layer (10) and a paraelectric layer (15) arranged between a first electrode (5) and a second electrode (20). At least the ferroelectric layer produces a negative differential capacitance to amplify an applied voltage. Thicknesses of the ferroelectric layer and the paraelectric layer are selected to result in simultaneous breakdown of the ferroelectric layer and the paraelectric layer for the formation of conductive filaments (60) upon being exposed to an electric field produced by the applied voltage amplified by the negative differential capacitance."
The patent application was internationally filed on Mar. 13, 2024, under International application No.PCT/EP2024/056721.
Disclaimer: Curated by HT Syndication.
