MUMBAI, India, Aug. 29 -- Intellectual Property India has published a patent application (202517074856 A) filed by Yangtze Memory Technologies Co. Ltd., Hubei, China, on Aug. 6, for 'semiconductor devices and fabricating methods thereof.'
Inventor(s) include Zhao, Dongxue; Yang, Yuancheng; Yang, Tao; Sun, Changzhi; Liu, Wei; Xia, Zhiliang; and Huo, Zongliang.
The application for the patent was published on Aug. 29, under issue no. 35/2025.
According to the abstract released by the Intellectual Property India: "Three-dimensional (3D) semiconductor devices and fabricating methods are provided. In some implementations, a disclosed semiconductor device comprises a plurality of vertical transistors, each comprising: a semiconductor layer having a leakage value lower than a pico-ampere and comprising a vertical semiconductor portion and at least one lateral semiconductor portion, a gate dielectric layer comprising a vertical gate dielectric portion on the vertical semiconductor portion and extending in the vertical direction, a gate electrode on the gate dielectric layer and separated from the semiconductor layer by the gate dielectric layer. The disclosed semiconductor device further comprises a plurality of capacitors each coupled with the semiconductor layer of a corresponding one of the plurality of vertical transistors."
The patent application was internationally filed on Sept. 12, 2023, under International application No.PCT/CN2023/118232.
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