MUMBAI, India, June 13 -- Intellectual Property India has published a patent application (202417073869 A) filed by Yangtze Memory Technologies Co. Ltd., Hubei, China, on Sept. 30, 2024, for 'three-dimensional memory and preparation method therefor, storage system, and electronic device.'
Inventor(s) include Zhang, Zhong; Wang, Di; Zhou, Wenxi; Xia, Zhiliang; and Huo, Zongliang.
The application for the patent was published on June 13, under issue no. 24/2025.
According to the abstract released by the Intellectual Property India: "The present disclosure relates to the technical field of semiconductor chips. Provided are a three-dimensional memory and a preparation method therefor, a storage system, and an electronic device. The three-dimensional memory comprises a stacked structure, an etching stop layer, a protective layer and a plurality of connecting columns, wherein the stacked structure comprises gate layers and dielectric layers, which are alternately arranged; the stacked structure comprises a plurality of steps; the etching stop layer is arranged on each step; the protective layer covers the stacked structure and the etching stop layer; and each connecting column penetrates the protective layer and the etching stop layer on the corresponding step and is electrically connected to the gate layer of the corresponding step."
The patent application was internationally filed on Mar. 17, 2023, under International application No.PCT/CN2023/082249.
Disclaimer: Curated by HT Syndication.
