MUMBAI, India, June 24 -- Intellectual Property India has published a patent application (202411090982 A) filed by Chairman, Defence Research & Development Organisation Drdo on November 22, 2024, for A High Electron Mobility Transistor (hemt) Structure And A Method Of Fabrication Thereof.
Inventors include Bag, Rajesh Kumar; Narang, Kapil; Singh, Vikash Kumar; Lohani, Jaya; Saini, Sachin Kumar; Padmavati, Mvg; and Tyagi, Renu.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: The present invention relates to a high electron mobility transistor (HEMT) structure comprising of a plurality of epilayers stacked over a substrate (1) with improved growth and 2DEG properties and a method for fabricating the structure by metal organic vapour phase epitaxy (MOVPE) technique. The epilayers of the structure have good crystalline, surface and interfacial characteristics that improves the quality, structural integrity and performance of the structure. Further, the present invention relates to a HEMT structure for high power and high frequency applications.
Disclaimer: Curated by HT Syndication.
