MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202611052134 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on April 24, 2026, for A Metal-Semiconductor-Metal Photodetector And A Method Of Fabrication Thereof.
Inventors include Amritanshu Pandey; Shivam Verma; Vikram Pratap Singh; and Sanjeev Mani Yadav.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention provides a metal-semiconductor-metal photodetector and a method of fabrication thereof. The present invention provides a cost-effective, facile approach for method of fabrication of the photodetector (10) for both ultraviolet and visible broadband detection. The broadband photodetector (10) comprises of a glass substrate (1) coated with indium tin oxide (ITO) comprising a non- conductive channel created by isolating ITO layer to form two electrodes (2) followed by drop-casting of CMS solution onto the channel followed by baking and repeating the process to form a photoactive layer (3) bridging the ITO electrodes. The broadband photodetector (10) possesses high responsivity, fast response time, high detectivity, excellent stability and exhibits broadband response between 370 and 550 nm in the UV-Visible region with responsivity 1.36 A/W and a detectivity of 1.41 × 10¹² Jones. Figure 1 on sheet no. 1 of the drawings may accompany the abstract when published.
Disclaimer: Curated by HT Syndication.
