MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202611072005 A) filed by Graphic Era Deemed To Be University on June 10, 2026, for A Method For Channel Doping Optimization In An Ingaas-Soi Finfet Device For Radio-Frequency Operation.
Inventors include Ajay Kumar; Priyanka Agrwal; Neha Gupta; Aditya Jain; and Kaushal Kumar.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: ABSTRACT A METHOD FOR CHANNEL DOPING OPTIMIZATION IN AN InGaAs-SOI FinFET DEVICE FOR RADIO-FREQUENCY OPERATION The invention relates to semiconductor devices and, more particularly, to a method for optimizing channel doping in an InGaAs-SOI-FinFET for radio-frequency operation. The method configures an InGaAs semiconductor channel body between n-type source and drain regions, with a channel/gate length of 7 nm, fin height of 8 nm, fin width of 4 nm, and a fin height to fin width ratio of 2. A 1 nm HfO2 gate dielectric layer having a dielectric constant of 25 is formed on three sides of the fin, and a gate electrode having a work function of 5.0 eV is arranged thereover. A three-dimensional device model is evaluated in ATLAS at VDS of 0.2 V while sweeping p-type channel doping among 1.0×1016 cm-3, 5×1016 cm-3, and 1.0×1017 cm-3 to determine fT, fMAX, GFP, TFP, and GTFP, whereby 5×1016 cm-3 is selected.
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