MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202611087745 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on July 17, 2026, for A Method For Preserving Morphology Of A Single-Crystalline Two-Dimensional Oxyhalide Flake.
Inventors include Kushwaha Tribhuvan Chaturanand; Pavan Pujar; Ashritha Salian; Alamanda Dharnesh; Rahul Tiwari; and Mahiman Bansal.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: The present invention relates to a method for preserving morphology of a single-crystalline two-dimensional oxyhalide flake. The present invention introduces a polymer-assisted transfer method of fragile single-crystalline two-dimensional (2D) oxyhalide flakes from a growth substrate to a target substrate that preserves the original morphology and crystallinity of the flakes during transfer. The method is specifically for transferring epitaxially grown 2D crystals from the growth substrates like sapphire or mica onto a target substrate that involves employing a controlled spin-coated supporting film of polyvinyl alcohol, followed by water-assisted delamination, polymer dissolution and thermal treatment that enables the transfer of thin crystalline flakes while preserving the geometrical shapes such as squares, triangles and hexagons. Figure 5 on sheet no. 2 of the drawings may accompany the abstract when published.
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