MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202611007284 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on January 24, 2026, for A Method For Synthesis Of A Crystalline Oxyhalide Thin Film.
Inventors include Kushwaha Tribhuvan Chaturanand; Pavan Pujar; Ashritha Salian; Alamanda Dharnesh; Rahul Tiwari; and Karnati Sai Karthik.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention provides a method for synthesis of a crystalline oxyhalide thin film. The present invention provides a pellet-to- film solid-state growth method in which a LaOCl pellet is thermally treated on a c-plane sapphire substrate melt-recrystallization technique. The method of the present invention allows the direct growth of uniform, well-defined 2D LaOCl single-crystal thin films without the need for complex deposition systems, thereby solving the key problems of high cost, scalability, crystallinity control, and integration of the existing methods. Figure 1 on sheet no. 1 of the drawings may accompany the abstract when published.
Disclaimer: Curated by HT Syndication.
