MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202611042959 A) filed by Indian Institute Of Technology Banaras Hindu University, Varanasi on April 03, 2026, for A Method Of Preparation Of A Semiconductor Material For An Optoelectronic Device.
Inventors include Swarnima Singh; and Prabhakar Singh.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention relates to a cost-effective and facile method of preparation of a semiconductor material for optoelectronic device. Further, the semiconductor material is synthesized at low-temperature and is phase-pure and crystalline with reduced trap densities and improved charge transport. In addition, the semiconductor material exhibits enhanced grain growth, reduction in oxidation of Sn2+ to Sn4+ without any additive and a reduction in microstrain and dislocation density resulting in improved electrical conductivity. The semiconductor material also exhibits n-type semiconductor properties with minimal defect states and improved optical response, thereby providing a stable, less toxic, efficient and economically viable alternative for optoelectronics. Figure 1 on sheet no. 1 of the drawings may accompany the abstract when published.
Disclaimer: Curated by HT Syndication.
