MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202611040435 A) filed by Galgotias University on March 31, 2026, for A Multi-Gate Graphene Nanoribbon Tunnel Field-Effect Transistor With Program Gate–control Gate Architecture For Enhanced Analog And Rf Performance.
Inventor includes Md Akram Ahmad.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: The present invention discloses a multi-gate graphene nanoribbon tunnel field-effect transistor (GNR-TFET) with a program gate– control gate (PGCG) architecture. The device comprises a four-gate configuration with independently biased program and control gates, enabling enhanced electrostatic control and tunneling efficiency. By optimizing the inter-gate spacing, the device achieves improved ON-current, higher ION/IOFF ratio, enhanced transconductance, and superior analog/RF performance. The invention employs electrostatic doping and a line-tunneling mechanism to overcome limitations of conventional TFETs. The proposed architecture is suitable for energy-efficient, high-frequency, and next-generation nano-electronic applications.
Disclaimer: Curated by HT Syndication.
