MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202641067331 A) filed by Dr. Chella Pandian Kannan on May 29, 2026, for A Novel Intercrossed Framework Of Bunsenite And Aipo4 To Produce A Semiconductor And Its Applications.
Inventors include Dr. Chella Pandian Kannan; and M. Shaber Mathi.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: Kanshablite-BG, an entirely novel intercrossed framework ofbunsenite and AlP04, is developed at ambient temperature using a simple one step sol-gel process without pressure or an inert atmosphere. This method gets beyond the drawbacks of traditional NiO synthesis, namely agglomeration, high temperature, and low purity. The presence of cubic NiO and mixed-phase AIP04, which create a highly crystalline framework, is confirmed by structural investigation. The material has a mesoporosity with a surface area of291 m2/g, a band gap of 3.4-3.6 eV, and good thermal stability up to 1200 °C. The AlP04 framework promotes catalytic efficiency by enhancing porosity and limiting agglomeration. Additionally, the material enables low-density polyethylene and polypropylene to be catalytically converted into gasoline at lower temperatures (200-250 °C), substantially lower than conventional processes. Its potential as a porous, thermally stable semiconductor catalyst for energy and environmental applications is emphasized by these characteristics.
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