MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202641092541 A) filed by Indian Institute Of Science on July 30, 2026, for A Spacer-Free Synthetic-Antiferromagnet-Like Magnetic Reference Structure For Mtj And Mram Devices.
Inventors include Bhagwati Prasad; and Anup Kumar Bera.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: “A SPACER-FREE SYNTHETIC-ANTIFERROMAGNET-LIKE MAGNETIC REFERENCE STRUCTURE FOR MTJ AND MRAM DEVICES” The present disclosure relates to spacer-free synthetic-antiferromagnet-(SAF) like magnetic reference structure for magnetic tunnel junctions and MRAM devices. In an embodiment, spacer-free-SAF like magnetic reference structure includes forming substrate and disposing spacer-free magnetic layer on the substrate. The spacer-free magnetic layer comprises pinning layer comprising layer of antiferromagnetic material, disposed on the substrate. Further, spacer-free magnetic layer comprises a reference layer comprising of a layer of ferromagnetic material, disposed on the pinning layer. Specifically, spacer-free magnetic layer exhibits at least one of: two-step magnetization reversal and plateau-like hysteresis through interfacial coupling, non-collinear spin arrangements and nontrivial magnetization textures. Thereafter, the spacer-free-SAF like magnetic reference structure comprises disposing, free layer above the spacer-free magnetic layer. Furthermore, the spacer-free-SAF like magnetic reference structure comprises disposing tunnel barrier between the free layer and the spacer-free magnetic layer. Additionally, the spacer-free-SAF like magnetic reference structure comprises disposing capping layer on the free layer. [FIG. 1]
Disclaimer: Curated by HT Syndication.
