MUMBAI, India, July 31 -- Intellectual Property India has published a patent application (202411100970 A) filed by Motilal Nehru National Institute Of Technology on December 19, 2024, for A Tri-State Dopingless Double-Gate Tunnel Field-Effect Transistor Device.
Inventor includes Kumari Nibha Priyadarshani.
The application for the patent was published on July 24, 2026, under issue no. 30/2026.
Abstract: ABSTRACT “A TRI-STATE DOPINGLESS DOUBLE-GATE TUNNEL FIELD-EFFECT TRANSISTOR DEVICE” The present invention provides a tri-state dopingless double-gate tunnel field-effect transistor device (100) comprises a drain electrode (1), a source electrode (2) a set of gate electrodes (3, 4, 7), a dielectric layer (5), a channel region (6)The drain electrode (1) is configured to collect carriers that tunnel through said channel region (6). The source electrode (2) is configured to inject the carriers into said channel region (6) The set of gate electrodes include primary gate electrode (3,4) tunneling enhancement gate electrode (7) that is placed near said source electrode (2), tunneling enhancement gate electrode (7) is configured to increase the tunneling current after a particular gate voltage resulting in third state of drain current and a primary gate electrode (3,4) for transistor switching and control a current flow through said channel region (6). The dielectric layer (5) works as gate dielectric for the said set of gate electrodes (3, 4) dielectric under source (2) and drain electrode (1). Figure 1 on sheet no. 1 of the drawings may accompany the abstract when published.
Disclaimer: Curated by HT Syndication.
