MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202541008652 A) filed by Moschip Technologies Limited on February 03, 2025, for Active Diode Circuit With Improved Fast-Transient Response.
Inventors include Murty Dvr; Rayudu Pnvnsrs; Rajat Chauhan; and Venkateswara Rao B.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: ABSTRACT ACTIVE DIODE CIRCUIT WITH IMPROVED FAST-TRANSIENT RESPONSE The present invention relates to a bias current boosting circuit for improving fast transient response in active diode based power management circuits. The circuit monitors an output voltage of an active diode relative to a corresponding input voltage and detects large voltage undershoots caused by fast line or load transients. Upon detection of the output voltage falling below the input voltage by more than a predefined voltage margin, the circuit momentarily increases a bias current supplied to the active diode. The temporary bias current boost enables rapid response of the active diode, thereby reducing output voltage undershoot and improving stability. Once the output voltage is restored, the bias current is automatically returned to its nominal level to minimize power consumption. The circuit operates without cross-coupling between multiple active diode paths and provides independent bias boosting only when required. The invention is particularly suitable for low-power power management integrated circuits employing multiple input power sources.
Disclaimer: Curated by HT Syndication.
