MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202611070915 A) filed by National Institute Of Technology, Hamirpur on June 08, 2026, for Coaxial-Annular Through-Glass Via Structure For Three-Dimensional Integrated Circuits, Methods Of Fabrication, Characterization & Design Thereof.
Inventors include Rohit Dhiman; K. Madhu Kiran; Suyash Sachdeva; and Rajeevan Chandel.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: A coaxial-annular through-glass via (CoA-TGV) structure (100) for 3D ICs comprises a glass substrate having a via opening, an annular signal conductor (120) disposed within the via opening as a composite annular structure with inner and outer conductor walls and a benzocyclobutene (BCB) dielectric fill (130) there between, a glass substrate region (110) disposed about the annular signal conductor (120), and an outer conductor shell (140) coaxially disposed with respect to the annular signal conductor (120) and functioning as a return path and EM shield layer. Electromagnetic fields are confined within the glass substrate region (110) between the two conductors, minimizing crosstalk and electromagnetic interference. The annular geometry reduces thermo-mechanical stress arising from the coefficient of thermal expansion mismatch. Methods of electromagnetic characterization using Hankel function solutions incorporating skin effect and eddy current losses, a method of designing the CoA-TGV structure for predetermined performance specifications, a fabrication method, and a 3D IC package are also provided.
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