MUMBAI, India, July 30 -- Intellectual Property India has published a patent application (202621067569 A) filed by Indian Institute Of Science Education And Research Bhopal on May 29, 2026, for Computationally Efficient Band Structure-Based Approach For Accurately Determining Electrostatics And Current In Utb Mosfets.
Inventors include Dr. Aditya Sankar Medury; and Nalin Vilochan Mishra.
The application for the patent was published on July 24, 2026, under issue no. 30/2026.
Abstract: The present invention relates to a computationally efficient band structure-based method and system for accurately determining electrostatics and current characteristics in ultra-thin-body (UTB) metal oxide semiconductor field effect transistor (MOSFET) devices. The invention utilizes a semi-empirical tight-binding band structure approach integrated with self-consistent electrostatic calculations for modeling quantum confinement effects, short-channel effects, and nanoscale carrier transport behavior. The method comprises defining device geometry and material parameters, generating band structures using significant k-points, solving Poisson equations for electrostatic potential and carrier density distribution, and evaluating thermionic and tunneling current components through transport-based current analysis. The invention further enables extraction of device performance parameters including threshold voltage, subthreshold swing, ON-current, and OFF-current for device optimization. Additionally, the framework incorporates phonon scattering effects and supports a wide range of semiconductor materials including silicon, germanium, heterostructures, and two-dimensional materials. The invention provides improved computational efficiency, enhanced physical accuracy.
Disclaimer: Curated by HT Syndication.
