MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202621071884 A) filed by Indian Institute Of Technology Bombay; and Savitribai Phule Pune University Sppu on June 10, 2026, for Engineering Stable Near-Infrared Defect Emission Centres In Hexagonal Boron Nitride Via Krypton Ion Implantation.
Inventors include Shyam, Ikshvaku; Majumder, Amrita; Khunte, Janhavi Jayawant; Ekta; Kumar, Anshuman; Sonawane, Amol; Dahiwale, Shailendra; and Dhole, Sanjay Daga.
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: Embodiments of the disclosed technology relate to generation of optically active defect centers in hexagonal boron nitride by krypton ion implantation. A hexagonal boron nitride layer is implanted with krypton ions at an implantation energy and an implantation fluence effective to form vacancy-related defect centers exhibiting near-infrared photoluminescence directly after implantation. In some embodiments, the implantation energy is about 40 keV and the fluence is 1011 ions/cm2 to 1015 ions/cm2. In some embodiments, the defect centers emit at 800 nm to 850 nm, including about 830 nm, and remain optically stable from 300 K to 20 K. Krypton provides an inert, intermediate-mass implantation species that can balance defect generation and lattice preservation, reduce contamination and excessive sputtering, and in some embodiments avoid post-implantation thermal annealing. The disclosed material can be used in quantum photonic devices, single-photon sources, quantum sensing platforms, and integrated nanophotonic systems.
Disclaimer: Curated by HT Syndication.
