MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202631008177 A) filed by Indian Institute Of Technology Guwahati on January 28, 2026, for Isotropically Dense Out Octet (idoo) Lattice Structure And Its Method Of Formation.
Inventors include Manish Dalakoti; Arijit Mandal; Prasenjit Khanikar; Prof. V. G. M. Naidu; and Kashif Akhtar Ahmed.
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: ABSTRACT ISOTROPICALLY DENSE OUT OCTET (IDOO) LATTICE STRUCTURE AND ITS METHOD OF FORMATION An isotropically dense out octet (IDOO) lattice structure (100) includes a cubic unit cell (102) formed from four base octet sub-structures (104, 106, 108, 110) of differing aspect ratios but a common uniform strut (112) diameter. The unit cell (102) is sequentially mirrored across the YZ (122), XZ (124), and XY (126) mirroring planes, producing a cubic lattice architecture with identical pore variation on every face. Pore diameter increases continuously from small pores (128) in an outer shell region (116), through a transition zone (118), to large pores (130) in an inner core region (120), while relative density decreases correspondingly, without any change in strut (112) diameter. This preserves uninterrupted node-to-node connectivity and eliminates stress concentrations at unit cell (102) interfaces. Curvature-driven concave and convex strut (112) surfaces arise at sub-structure interfaces, promoting tissue ingrowth and cellular bridging across the graded pore structure. [[FIGURE 7g]]
Disclaimer: Curated by HT Syndication.
