MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202621006766 A) filed by Prof. K. D. Patel; Dr. Chetan Zankat; Mr. Ashok Brijlal Patil; Mr. Kaushik Ishwarbhai Panchal; Mr. Preet Deepankumar Vyas; Mr. Devang Rameshbhai Dhorada; Mr. Kevin Kantilal Bhanderi; and Dr. Shubham Umeshkumar Gupta on January 23, 2026, for Liquid Nitrogen Cryostat For Measuring Physical Properties Of Materials And Semiconductor Devices.

Inventors include Prof. K. D. Patel; Dr. Chetan Zankat; Mr. Ashok Brijlal Patil; Mr. Kaushik Ishwarbhai Panchal; Mr. Preet Deepankumar Vyas; Mr. Devang Rameshbhai Dhorada; and Mr. Kevin Kantilal Bhanderi.

The application for the patent was published on July 10, 2026, under issue no. 28/2026.

Abstract: The present invention provides a liquid nitrogen cryostat apparatus for the characterization of physical properties of materials. The apparatus comprises a transparent vacuum chamber (8) mounted on a thermally insulating, non-metallic manifold (3). The manifold (3) seals a cryostat tank (1) and provides a vacuum-tight base for the chamber (8). A vertical rod (2) of high thermal conductivity penetrates the manifold (3), with a lower end immersed in a cryogenic liquid and an upper end, which functions as a sample stage, located within the transparent vacuum chamber (8). This design provides a compact, low-cost, and valve-free system that enables a wide range of characterization measurements. The transparent vacuum chamber (8) provides full optical access, allowing the apparatus to be used for electrical measurements, opto-electronic characterization, and optical spectroscopy on a sample (10) at controlled temperatures, typically from 77K to 373K.

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