MUMBAI, India, July 13 -- Intellectual Property India has published a patent application (202647083289 A) filed by International Business Machines on July 07, 2026, for Local Backside Contact Isolation For Merged Backside Contact Patterning.
Inventors include Oyibo, Gideon; Li, Tao; Xie, Ruilong Number; and Loubet, Nicolas, Jean.
The application for the patent was published on July 10, 2026, under issue no. 28/2026.
Abstract: A microelectronic structure including a first nanosheet transistor that includes a first source/drain. A second nanosheet transistor that is adjacent to the first nanosheet transistor and the second nanosheet transistor includes a second source/drain. A first backside contact connected to a backside surface of the first source/drain. A second backside contact connected to a backside surface of the second source/drain. A first shallow trench fill layer located between the first backside contact and the second backside contact. A second shallow trench fill layer located adjacent to the first backside contact. The second shallow trench fill layer is located on the opposite side of the first backside contact than the first shallow trench isolation layer. A backside isolation pillar located on top of the first shallow trench isolation fill layer. A top surface of the backside isolation pillar is coplanar with a top surface of the first and second backside contact.
Disclaimer: Curated by HT Syndication.
