MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202647091426 A) filed by Hitachi Energy Ltd on July 28, 2026, for Manufacturing Method For A Semiconductor Device And Semiconductor Device.
Inventors include Alfieri, Giovanni; Bolat, Sami; and Romano, Gianpaolo.
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: The invention relates to a method for manufacturing a semiconductor device (20, 32), comprising the steps of - providing a structure (10) comprising a wide-bandgap semiconductor layer (12) having a top surface (14) and an insulating layer (16) formed on the top surface (14) of the wide-bandgap semiconductor layer (12), and - treating the insulating layer (16) of the structure (10) by plasma-immersion ion implantation or by ion implantation for the implementation of oxygen ions (22) into the insulating layer (16). Furthermore, the invention relates to a semiconductor device (20, 32) obtained by the above method. Additionally, the invention relates to a semiconductor device (20, 32) having a structure (10) comprising a wide-bandgap semiconductor layer (12) having a top surface (14) and an insulating layer (16) formed on the top surface (14) of the wide-bandgap semiconductor layer (12), wherein the insulating layer (16) is silicon dioxide layer or a metal oxide layer and wherein the insulating layer (16) comprises oxygen vacancies in the oxidation state +II and further comprises oxygen vacancies in the oxidation state -II.
Disclaimer: Curated by HT Syndication.
