MUMBAI, India, Oct. 26 -- Intellectual Property India has published a patent application (202541037942 A) filed by Samsung Electronics Co. , Ltd. on April 21, 2025, for Method And Storage Device For Managing Read Disturbance In Storage Device With Intensive Read Workload.
Inventors include Nishchay Malakar; Anantha Sharma; Praveen C Bademi; Pankaj Kumar Gautam; Kiranmayi Kamalay; Talluri Sai Dilip; Sharath Kumar Kodase; and Gangheyamoorthy Ayyanar Ponnusamy.
The application for the patent was published on October 23, 2026, under issue no. 43/2026.
Abstract: TITLE: “METHOD AND STORAGE DEVICE FOR MANAGING READ DISTURBANCE IN STORAGE DEVICE WITH INTENSIVE READ WORKLOAD” 5 ABSTRACT A method may include: reading a first Logical Block Addresses (LBA) from a host read buffer; identifying a first read disturbance in the first LBA; copying first data associated with the first LBA to a Garbage Collector (GC) buffer pool, based on the identifying the first read disturbance; reading a 10 second LBA from the host read buffer; identifying a second read disturbance in the second LBA; copying second data associated with the second LBA to the GC buffer pool, based on the identifying the second read disturbance; generating a reclaim queue including the first LBA and the second LBA; identifying at least part of the first data and the second data to be written from the GC buffer pool to a GC destination block; and writing the at least part of the first data and the second data to the GC 15 destination block. Fig. 1
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