MUMBAI, India, June 24 -- Intellectual Property India has published a patent application (202411092172 A) filed by Indian Institute Of Technology Delhi on November 26, 2024, for Method For Generating Phosphorous-Doped Nano-Crystalline Silicon Thin Films.
Inventors include Komarala, Vamsi Krishna; Bhattacharya, Shrestha; Pandey, Ashutosh; and Singh, Son Pal.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: A method (200) for generating a phosphorous-doped nano-crystalline silicon thin films in optoelectronic devices is disclosed. The method (200) comprises a substrate such as a silicon wafer (110) or a glass slide are selected and placed on a quartz silicon substrate holder (108) of a Plasma-enhanced chemical vapor deposition (PECVD) apparatus (102). Further, placed on a heating platform (106) and heated at a predetermined temperature for a predetermined time period for temperature stabilization. Furthermore, a layer of intrinsic amorphous silicon is generated based on forming a plasma (118) by a plasma generator from a mixture of silane and hydrogen gases added in the chamber of the PECVD apparatus (102). Further, nano-crystalline silicon thin films are formed based on adding a mixture of silane, hydrogen, and phosphine gases in a predefined quantity and at a predetermined pressure through the chamber of the PECVD apparatus (102) for high efficiency and high conductivity.
Disclaimer: Curated by HT Syndication.
