MUMBAI, India, June 22 -- Intellectual Property India has published a patent application (202631053182 A) filed by Achintya Das on April 26, 2026, for Multi-Layer Built-In-Field-Driven Semiconductor Detector With Depth-Resolved Readout For Ionizing Particles And Energetic Photons.
Inventor includes Achintya Das.
The application for the patent was published on June 12, 2026, under issue no. 24/2026.
Abstract: A built-in-field driven semiconductor detector for detection of ionizing particles and, in certain embodiments, energetic photons is disclosed, comprising a plurality of vertically stacked p–n and/or p–i–n junctions formed within a semiconductor body. Electrical isolation regions are disposed between adjacent junctions to reduce interlayer electrical coupling and to define multiple depth-separated depletion regions. A shared electrode is coupled to one conductivity type of the stacked junction structure, and a plurality of individually accessible electrodes is coupled to the opposite conductivity type at respective junction regions to provide layer-resolved access to transient electrical signals originating from different depths within the detector. The detector is operable without an externally applied bias and generates depth- dependent electrical responses corresponding to localized energy deposition by incident ionizing particles or energetic photons. The stacked architecture enables distributed electric-field formation across the detector thickness and supports depth-resolved sensing in a compact, monolithic structure suitable for operation in power- constrained or inaccessible environments. Optional embodiments include selection of semiconductor materials and configuration of junction properties to tailor charge- collection characteristics for specific applications.
Disclaimer: Curated by HT Syndication.
