MUMBAI, India, Aug. 12 -- Intellectual Property India has published a patent application (202631022597 A) filed by Indian Institute Of Technology Kharagpur on February 25, 2026, for Multistate Flexible Nonvolatile Organic Phototransistor Memory Based On Lanthanide Nanoparticles For Hardware Reduction And Information Encryption.
Inventors include Rajdeep Banerjee; Pradip Kumar Chakraborty; and Dipak Kumar Goswami.
The application for the patent was published on August 07, 2026, under issue no. 32/2026.
Abstract: ABSTRACT Title: Multistate Flexible Nonvolatile Organic Phototransistor Memory Based on Lanthanide Nanoparticles for Hardware Reduction and Information Encryption An unique multistate, flexible nonvolatile memory (NVM) organic phototransistor (OPT) employing Lanthanide nanoparticles-PMMA nanocomposite as a floating gate charge trapping dielectric layer for demonstrating hardware reduction and data encryption applications are provided, with each said OPT device intrinsically being able to store two bits (four current states), unlike conventional single-bit transistors. This enables a 50% reduction in transistor count for data storage. For example, storing an 8-bit ASCII character requires only 4 devices instead of 8. Beyond storage, binary to decimal, hexadecimal, and octal conversions was also made possible by directly using the 2-bit states (00, 01, 10, 11), which simplifies conversion logic and further reduces hardware requirements. The device also incorporates a two-step data encryption mechanism: (i) mapping binary inputs into multi-level current states, and (ii) requiring specific gate read voltages for correct decryption. This provides intrinsic physical-layer security without additional overhead as demonstrated on a flexible platform for data encryption and hardware reduction in flexible electronics.
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