MUMBAI, India, Aug. 10 -- Intellectual Property India has published a patent application (202621036305 A) filed by Indian Institute Of Technology Indore on March 25, 2026, for Nanophotonic Resistive Switching Device And Method Of Operating And Fabricating The Same.
Inventors include Kumar, Mukesh; Kumar, Santosh; Kumar, Ashutosh; and Yadav, Gaurav Kumar.
The application for the patent was published on July 31, 2026, under issue no. 31/2026.
Abstract: A nanophotonic resistive switching device (104) includes a silicon-on-insulator substrate (302, 304) and a plurality of nanophotonic resistive switches (206) formed on the silicon-on-insulator substrate (302, 304). Each nanophotonic resistive switch (206) includes a layered structure including a p-type silicon rib waveguide, an indium tin oxide layer disposed on the p-type silicon rib waveguide and configured to act as a bottom electrode, a silicon dioxide layer disposed on the indium tin oxide layer, and a silver layer disposed on the silicon dioxide layer and configured to act as a top electrode. The layered structure supports a hybrid plasmonic mode confined within the silicon dioxide layer such that application of an external voltage across the top electrode and the bottom electrode causes formation of conductive filaments in the silicon dioxide layer through electrochemical metallization, to modulate optical transmission through the p-type silicon rib waveguide for optical readout of an electrically written state.
Disclaimer: Curated by HT Syndication.
