MUMBAI, India, June 30 -- Intellectual Property India has published a patent application (202617066778 A) filed by Vishay Semiconductor Gmbh on May 27, 2026, for Photodetector With Enhanced Ultraviolet Light Sensitivity.
Inventors include Esteki, Ardeshir; Gebauer, Christoph; Gottlob, Heinrich; and Lemme, Max.
The application for the patent was published on June 26, 2026, under issue no. 26/2026.
Abstract: A photodetector and method of making the same including a semiconductor and a 2D material. The space charge region is located directly at the surface of the semiconductor. A photon with a small wavelength, once it enters the semiconductor, is immediately inside the space charge region in which an electron-hole pair generated by the photon can contribute to a photocurrent. This makes the photodetector an efficient UV detector. Interdigitated oxide structures between the semiconductor and the 2D material further enhance the sensitivity of the photodetector to, for example, UV light.
Disclaimer: Curated by HT Syndication.
