MUMBAI, India, June 30 -- Intellectual Property India has published a patent application (202647074810 A) filed by Hitachi Energy Ltd on June 17, 2026, for Power Semiconductor Module.
Inventors include Paques, Gontran; Roesch, Andreas; and Chen, Makan.
The application for the patent was published on June 26, 2026, under issue no. 26/2026.
Abstract: A power semiconductor module (100), comprising a top plate (10), which has a first main surface (11) and a second main surface (12) opposite the first main surface (11) along a stacking direction (S1), and a bottom plate (20), which has a third main surface (21) and a fourth main surface (22) opposite the third main surface (21) along the stacking direction (S1). The power semiconductor module (100) further comprises a frame structure (30), which surrounds a power semiconductor device (99) in a first plane (P1) that extends along a first lateral direction (L1) and a second lateral direction (L2). The frame structure (30) comprises a first frame part (40) with a first height (41), arranged between the top plate (10) and the bottom plate (20) along the stacking direction (S1), wherein the first frame part (40) comprises a structured body (45) adapted to control the propagation of ionized gas or plasma from the power semiconductor device (99) during a failure. The frame structure (30) further comprises a second frame part (50) with a second height (51), at least partially arranged between the top plate (10) and the bottom plate (20) along the stacking direction (S1), wherein the second frame part (50) circumferentially surrounds the first frame part (40) in the first plane (P1) that extends along the first lateral direction (L1) and the second lateral direction (L2) and is configured to prevent leakage from the inside of the power semiconductor module (100).
Disclaimer: Curated by HT Syndication.
