MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202617093137 A) filed by Dai Nippon Printing Co. , Ltd. on July 31, 2026, for Power Storage Device And Method For Manufacturing Same, And Outer Package Material For Power Storage Device And Method For Manufacturing Same.
Inventors include Shimada, Shinya; Kanazawa, Sayoko; and Okada, Emiko.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: This power storage device includes an electrode body and an outer package that seals the electrode body. The outer package has an outer package film that wraps the electrode body, and a lid body that seals the electrode body together with the outer package film. The outer package film is composed of a multilayer body that includes at least a barrier layer and a thermally fusible resin layer. In the barrier layer, the ratio (R1/R2) of the area average crystal grain size R1 (µm) to the area average crystal grain size R2 (µm) is 55% or more. The area average crystal grain size R1 (µm) is obtained by performing crystal analysis by the EBSD method on a cross section perpendicular to the rolling direction of the barrier layer and obtained by cutting the barrier layer in the perpendicular direction from the surface of the barrier layer at a position where the thermally fusible resin layer of the outer package film is thermally fused with the lid body. The area average crystal grain size R2 (µm) is obtained by performing crystal analysis by the EBSD method on a cross section perpendicular to the rolling direction of the barrier layer and obtained by cutting the barrier layer in the perpendicular direction from the surface of the barrier layer at a position where the thermally fusible resin layer of the outer package film is not thermally fused.
Disclaimer: Curated by HT Syndication.
