MUMBAI, India, July 24 -- Intellectual Property India has published a patent application (202611065952 A) filed by Indian Institute Of Technology Mandi on May 25, 2026, for Process For Forming A Stratified Quasi-Two-Dimensional Perovskite Film And Device Thereof.
Inventors include Koushik Gayen; Suman Kalyan Pal; Soumya Halder; and Nagendra S Kamath.
The application for the patent was published on July 17, 2026, under issue no. 29/2026.
Abstract: ABSTRACT PROCESS FOR FORMING A STRATIFIED QUASI-TWO-DIMENSIONAL PEROVSKITE FILM AND DEVICE THEREOF The present invention relates to a process (100) for fabricating a quasi-two-dimensional perovskite photovoltaic structure and a quasi-two-dimensional perovskite photovoltaic device (200). The process comprises depositing (102) a fluorinated quasi-two- dimensional Ruddlesden-Popper perovskite precursor onto a preheated substrate (202) comprising a hole transport layer (204), and crystallizing (104) the deposited precursor under thermal conditions to induce spontaneous vertical phase stratification within a single continuous perovskite film (206). Lower-n phases are formed adjacent to the hole transport layer (204), while higher-n phases are formed toward an electron transport layer (208). The process further comprises depositing (106) the electron transport layer (208) and an electrode (210). The vertically stratified perovskite film (206) forms an internal type-II band-aligned heterostructure enabling bidirectional charge separation, reduced carrier recombination, enhanced photocurrent generation, and improved photovoltaic and visible-light photodetection performance. FIG. 1 will be the reference figure.
Disclaimer: Curated by HT Syndication.
