MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202611103219 A) filed by Noida International University on August 27, 2026, for Reduced Graphene Oxide–p3ht Composite Photodetector.
Inventors include Minakshi Sharma; Ankita Saxena; Pradyut Anand; and Rahul Kumar Singh.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: A polymer-based photodetector comprises a composite photoactive material containing reduced graphene oxide incorporated in a poly(3-hexylthiophene) matrix. Pristine poly(3-hexylthiophene) has restricted charge-transport properties that limit photodetector performance. Incorporation of reduced graphene oxide increases charge-carrier mobility and absorbance, resulting in increased photocurrent and reduced reverse dark current. Impedance measurements indicate increased shunt resistance and reduced capacitance, corresponding to improved conductivity and suppression of charge recombination. At an applied voltage of 2.0 V, the composite photodetector provides a photoresponsivity of 0.85 A/W and a detectivity of (4.78 imes 10^{11}) Jones, each exceeding the corresponding value of a pure poly(3- hexylthiophene) photodetector by more than one order of magnitude. The photodetector is applicable to optical sensing and optoelectronic detection systems.
Disclaimer: Curated by HT Syndication.
