MUMBAI, India, Aug. 17 -- Intellectual Property India has published a patent application (202617084112 A) filed by International Business Machines Corporation on July 08, 2026, for Self-Aligned Backside Diffusion Break And S/D Contact.
Inventors include Kang, Tsung-Sheng; Li, Tao; Xie, Ruilong; and Yang, Chih-Chao.
The application for the patent was published on August 14, 2026, under issue no. 33/2026.
Abstract: A semiconductor device includes source/drain regions (114) laterally disposed relative to one another in a row of the semiconductor device. A diffusion break (240) is disposed between two adjacent source/drain regions and extends toward the backside between two source/drain region contacts (206). The diffusion break includes a different lateral dimension between the two adjacent source/drain regions than between the two source/drain region contacts.
Disclaimer: Curated by HT Syndication.
