MUMBAI, India, July 7 -- Intellectual Property India has published a patent application (202544130582 A) filed by Nichia Corporation on December 23, 2025, for Semiconductor Light Emitting Element.
Inventor includes Kishimoto Katsuhiro -.
The application for the patent was published on July 03, 2026, under issue no. 27/2026.
Abstract: A semiconductor light emitting element includes a GaN substrate; a first nitride semiconductor portion containing an n-type impurity and located on the substrate; a second nitride semiconductor portion containing an n-type impurity and located on the first nitride semiconductor portion; and a third nitride semiconductor portion containing an n-type impurity and located on the second nitride semiconductor portion. An n-type impurity concentration of the first nitride semiconductor portion is higher than that of the third nitride semiconductor portion, and an n-type impurity concentration of the second nitride semiconductor portion is higher than that of the third nitride semiconductor portion. An Al composition ratio of the second nitride semiconductor portion is higher than that of the first nitride semiconductor portion, and an Al composition ratio of the third nitride semiconductor portion is higher than that of the first nitride semiconductor portion. [FIG. 1]
Disclaimer: Curated by HT Syndication.
