MUMBAI, India, Nov. 2 -- Intellectual Property India has published a patent application (202631062882 A) filed by Cellark Powertech Private Limited on May 18, 2026, for Silicon–carbon Composite Anode Material Comprising Porous Silicon And Defect-Rich Graphitic Matrix.
Inventors include Pandey, Ashwani Kumar; Jena, Somen Sagar; Samantaray, Bikash Kumar; and Pati, Soobhankar.
The application for the patent was published on October 30, 2026, under issue no. 44/2026.
Abstract: A synthesis process combining mechanical embedding and carbon coating for the synthesis of a high-performance sustainable Si–C anode material. The process utilises porous silicon possessing interconnected open nanopores, which help accommodate silicon volume expansion during electrochemical cycling. The porous silicon is mechanically ball milled together with a graphite source having a highly defective structure and surface cracks, specifically graphite scrap generated from the mechanical cutting of graphite blocks, followed by carbon coating via a coal tar pitch-based carbon precursor, followed by a pelletization route before carbonisation.
Disclaimer: Curated by HT Syndication.
