MUMBAI, India, June 26 -- Intellectual Property India has published a patent application (202647071957 A) filed by Shindengen Electric Manufacturing Co. , Ltd. on June 10, 2026, for Silicon Carbide Semiconductor Device And Method For Manufacturing Silicon Carbide Semiconductor Device.
Inventors include Takahashi Teppei; Inoue Tetsuto; and Nakashima Saki.
The application for the patent was published on June 19, 2026, under issue no. 25/2026.
Abstract: This silicon carbide semiconductor device includes: a silicon carbide layer 12 of a first conductivity type; a plurality of well regions 50 of a second conductivity type, the plurality of well regions 50 being provided on the silicon carbide layer 12; source regions 40 of a first conductivity type, the source regions 40 being provided in the well regions 50; a JFET region 20 of the first conductivity type, the JFET region 20 being formed in a region sandwiched between the plurality of well regions 50 on the silicon carbide layer 12; an insulating film covering the JFET region 20; and a gate electrode 80 provided on the JFET region 20 with the insulating film interposed therebetween. First-conductivity-type impurities injected into the JFET region 20 are also injected into the well regions 50. Within the well regions 50, the concentration of second-conductivity-type impurities is higher than the concentration of the first-conductivity-type impurities.
Disclaimer: Curated by HT Syndication.
